SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR HAVING AN EPITAXIALLY GROWN BASE

摘要

A method of forming a semiconductor structure includes providing an emitter and a collector on a surface of an insulator layer. The emitter and the collector are spaced apart and have a doping of a first conductivity type. An intrinsic base is formed between the emitter and the collector and on the insulator layer by epitaxially growing the intrinsic base from at least a vertical surface of the emitter and a vertical surface of the collector. The intrinsic base has a doping of a second conductivity type opposite to the first conductivity type, and a first heterojunction exists between the emitter and the intrinsic base and a second heterojunction exists between the collector and the intrinsic base.

主权项

1. A semiconductor structure comprising:
an emitter and a collector spaced apart from each other and located on an insulator layer, wherein the emitter and the collector include a semiconductor material and have a doping of a first conductivity type; an intrinsic base disposed in between the emitter and the collector and on the insulator layer, wherein the intrinsic base includes a semiconductor material and has a doping of a second conductivity type which is opposite to the first conductivity type; and an extrinsic base disposed on a top surface of the intrinsic base, wherein a bottom surface of the extrinsic base has an epitaxial relationship with the top surface of the intrinsic base, wherein the intrinsic base contacts the emitter, the collector and the extrinsic base and wherein the intrinsic base has an energy band gap less than an energy band gap of the emitter and an energy band gap of the collector.