ELECTRONIC DEVICE INCLUDING SIDE GATE AND TWO-DIMENSIONAL MATERIAL CHANNEL AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE

摘要

Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

主权项

1. An electronic device comprising:
a substrate; an energy barrier forming layer on the substrate; an upper channel material layer on the substrate, the upper channel material layer including a two-dimensional (2D) material, the upper channel material layer at least partially covering an upper surface of the energy barrier forming layer; and a gate electrode that covers the upper channel material layer and the energy barrier forming layer, the gate electrode including a side gate electrode portion that faces a side surface of the energy barrier forming layer; a drain electrode on the substrate; and a source electrode on the upper channel material layer.