SEMICONDUCTOR DEVICE INCLUDING POLYGON-SHAPED STANDARD CELL

摘要

A semiconductor device including a standard cell for implementing a logic element includes a first active region and a second active region extending in a second direction on a substrate and spaced apart from each other in a first direction perpendicular to the second direction, gate electrodes intersecting the first active region and the second active region, and source regions and drain regions formed on the first and second active regions at both sides of each of the gate electrodes. A boundary of the standard cell has a polygonal shape, excluding a quadrilateral shape, when viewed in a plan view. As a result, an area of the standard cell may be reduced to reduce a size of the semiconductor device.

主权项

1. A semiconductor device comprising:
a standard cell for forming a logic element, the standard cell including: a first active region including a first PMOS region and a first NMOS region that are spaced apart from each other in a first direction and extend in a second direction on a substrate, the second direction being perpendicular to the first direction; a second active region including a second PMOS region and a second NMOS region that extend in the second direction on the substrate and are spaced apart from each other in the first direction; gate electrodes which intersect the first active region and the second active region in the first direction and are spaced apart from each other in the second direction; first source regions and first drain regions formed on the first active region at both sides of each of the gate electrodes in the second direction; and second source regions and second drain regions formed on the second active region at both sides of each of the gate electrodes in the second direction, wherein a boundary of the standard cell has a polygonal shape, excluding a quadrilateral shape, when an entirety of the boundary viewed in a plan view.