THREE DIMENSIONAL MEMORY AND METHODS OF FORMING THE SAME

摘要

Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the memory device. The memory device also includes a second group of memory cells, each of the memory cells of the second group being formed in a cavity of a second control gate located in another device level of the memory device. Additional apparatus and methods are described.

主权项

1. An apparatus comprising:
first memory cells located in a first device level of a memory device; second memory cells located in a second device level of the memory device; a first control gate formed in the first device level, the first control gate to control access to the first memory cells, wherein each of the first memory cells includes a memory element formed in a cavity of the first control gate; and a second control gate formed in the second device level, the second control gate to control access to the second memory cells, wherein each of the second memory cells includes a memory element formed in a cavity of the second control gate.