SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a semiconductor memory device includes a substrate; a stacked body provided on the substrate and including a first stacked portion, a second stacked portion and an intermediate layer, the first stacked portion and the second stacked portion including a plurality of electrode layers and a plurality of insulating layers, the intermediate layer provided between the first stacked portion and the second stacked portion; a column including a semiconductor film and a charge storage film; and an insulating part provided in the stacked body. The column has a first enlarged portion. The insulating part has a second enlarged portion surrounded by the intermediate layer, the second enlarged portion has a larger width than a width of the portion of the insulating part in the first stacked portion and the second stacked portion.

主权项

1. A semiconductor memory device, comprising:
a substrate; a lower stacked body provided on the substrate; an upper stacked body provided on the lower stacked body; a first film provided between the lower stacked body and the upper stacked body; a memory portion including
a first memory portion provided in the upper stacked body,a second memory portion provided in the lower stacked body, anda connecting portion integrally connected to the first memory portion and the second memory portion, the connecting portion provided in contact with the first film; a memory film provided in the memory portion; and a channel layer provided inside the memory film in the memory portion, wherein the first film is in contact with an upper surface of the connecting portion, a side surface of the connecting portion and a lower surface of the connecting portion.