发明名称 |
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers |
摘要 |
A semiconductor device including an oxide-nitride-oxide (ONO) structure having a multi-layer charge storing layer and methods of forming the same are provided. Generally, the method involves: (i) forming a first oxide layer of the ONO structure; (ii) forming a multi-layer charge storing layer comprising nitride on a surface of the first oxide layer; and (iii) forming a second oxide layer of the ONO structure on a surface of the multi-layer charge storing layer. Preferably, the charge storing layer comprises at least two silicon oxynitride layers having differing stochiometric compositions of Oxygen, Nitrogen and/or Silicon. More preferably, the ONO structure is part of a silicon-oxide-nitride-oxide-silicon (SONOS) structure and the semiconductor device is a SONOS memory transistor. Other embodiments are also disclosed. |
申请公布号 |
US2016300724(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201615099025 |
申请日期 |
2016.04.14 |
申请人 |
Cypress Semiconductor Corporation |
发明人 |
Levy Sagy Charel;Ramkumar Krishnaswamy;Jenne Fredrick;Geha Sam G. |
分类号 |
H01L21/28;H01L27/115;H01L21/02 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
San Jose CA US |