| 摘要 |
PROBLEM TO BE SOLVED: To reduce contact resistance by coating a semiconductor surface with a semiinsulating polycrystalline silicon film, forming a silicide film by making a part of a silicon film in contact with a high concentration impurity diffusion layer react with the upper layer metal film, and connecting the high- concentration impurity diffusion layer with wiring metal via the silicide film. SOLUTION: After layers from a field oxide film 2 to a shallow souse drain 7 are formed on a silicon substrate 1 (a), a semiinsulating polycrystalline silicon (SIPO hereafter) is deposited (b). After an interlayer film 9 is deposited, a contact hole is formed. At this time, an overetching region is stopped in the SIPOS film 8 (c). After a metal film like Ti is formed, silicidizing sintering is performed, an unnecessary metal film is etched, and a silicide film 11 is formed (d) by silicidizing the whole part of the SIPOS film 8 in the contact hole bottom. Thereby the surface of a shallow high concentration impurity diffusion layer is turned into silicide, without damaging the substrate, and e resistance can be reduced. |
