| 摘要 |
A cold electron emitting device has an emitter base portion, an emitter projection portion and a source region, each of which is an n-type semiconductor, formed on a p-type silicon substrate. A metal film which serves as an extraction electrode and a gate electrode of FET is formed via an insulating layer on the region of the substrate which includes the peripheral regions of the emitter base portion and source region. This cold electron emitting device can be manufactured as follows. First, a conical emitter having an emitter projection portion and emitter base portion and a source region are formed on a p-type semiconductor substrate. Next, an insulating layer and a metal film, which becomes an extraction electrode and a gate electrode of FET, is formed on the substrate which includes peripheral regions of the emitter base portion and source region. Then, an n-type impurity is doped in the emitter and the source region to form an n-type emitter and an n-type source region. In this manner, it is possible to manufacture a cold electron emitting device, which has an excellent work precision for the sharp tip of the emitter projection portion and an excellent uniform structure and can stably emit a current.
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