| 摘要 |
PROBLEM TO BE SOLVED: To avoid deteriorating semiconductor device characteristics due to the interface level generated at forming of electrodes by heating a semiconductor substrate in a lower temp. heating stage B than a semiconductor substrate heating stage A after this stage A, so as to form a metal film. SOLUTION: After the plasma etching of a wafer using a fluorine-type gas for patterning a polycrystalline Si or Si nitride film, the wafer is heated at 280-300 deg.C for 10-20min in a high temp. heat-treating stage A to release F ions from the water surface layer and then heated at 130-170 deg.C (a stage B) to successively deposit Al (3μm), Ni (0.3μm) and Au (0.1μm) by the electron beam deposition to form an Al-Ni-Au film. This makes compatible stable semiconductor device characteristics with good solder wettability.
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