THIN FILM EPITAXIAL WAFER AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To improve electrical characteristic and assure higher manufacturing yield. SOLUTION: The annealing process is conducted to the surface after manufacture of CZ(Czochralski) substrate to form a single crystal silicon substrate where COP (not less than 0.13μm thick) does not exist on the surface or a small number of COP exist. Epitaxial growth is executed under a reduced pressure on this single crystal substrate. COP on the epitaxial layer surface is lost or reduced after manufacture of a thin film epitaxial wafer by conducting H2 annealing to the single crystal substrate. Therefore, defect of a single crystal substrate due to COP can be lost or reduced to improve electrical characteristic of the thin film epitaxial wafer and manufacturing yield.