PRODUCTION OF SILICON WAFER, AND SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a silicon wafer production process comprising the hydrogen heat-treatment of a silicon wafer to eliminate the growth defects generated during the growth of the crystal up to a depth of >=3μm from the surface of the wafer, and to provide a silicon wafer produced by this process. SOLUTION: A wafer sliced from a silicon single crystal ingot is heat-treated in a non-oxidizing atmosphere containing hydrogen at a temp. of 1000-1250 deg.C until the oxygen concentration in the range from the wafer surface to the depth of >=7μm becomes 1/2 of the initial oxygen concentration before the heat- treatment. The heat-treatment time t(min) is set to be longer than the value calculated from the formula t(min)=6.91×10<-8>×exp 29360/(T+273)} wherein T( deg.C) is the heat-treatment temperature. The growth defects generated in the growth of the single crystal are eliminated to the depth of >=3μm from the surface of the silicon wafer produced by this process.