| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
The main surface of a first semiconductor chip having a first functional element is formed with first testing electrodes for testing the electrical characteristics of the first functional element and first connecting electrodes electrically connected to the first functional element. The main surface of a second semiconductor chip having a second functional element is formed with second testing electrodes for testing the electrical characteristics of the second functional element and second connecting electrodes electrically connected to the second functional element. The first semiconductor chip and the second semiconductor chip are integrated by using an insulating resin, with first bumps formed on the first connecting electrodes being bonded to third bumps formed on the second connecting electrodes.
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| 申请公布号 |
US5811351(A) |
申请公布日期 |
1998.09.22 |
| 申请号 |
US19970978270 |
申请日期 |
1997.11.25 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
KAWAKITA, TETSUO;MATSUMURA, KAZUHIKO;YAMANE, ICHIRO |
| 分类号 |
H01L21/66;H01L21/98;H01L23/58;H01L25/065;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/66 |
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