| 摘要 |
PROBLEM TO BE SOLVED: To reduce the consumption and generation of fine particles during etching of a wafer by providing a glassy carbon having specified relation between the relative intensity ratio between two specified band regions defined by Raman spectrum analysis and mean lattice plane spacing of a graphite hexagonal mesh layer. SOLUTION: The wafer is made of a glassy carbon having a homogeneous structure obtd. by baking a thermosetting resin with a high-purity materidal and a possibly high surface smoothness. The Raman spectrum analysis is applied to the carbon, using Ar ion laser beam of 5145Åin wavelength. If IA and IB are spectrum intensities at band regions of 1360±100 cm<-1> and 1580±100 cm<-1> and R is the relative intensity ratio IA/IB, it satisfies R>=(d002 -3.344)/0.135, where d002 is mean lattice plane spacing of a graphite hexagonal mesh layer inÅ.
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