摘要 |
Disclosed is a high frequency semiconductor laser module with a silicone substrate, especially a low resistance siliconized substrate, a laser diode mounted thereon and at least two H-F feeds, one of which is insulated from said siliconized substrate by a dielectric layer. According to the invention, the laser diode is laid on the siliconized substrate by means of a metallic assembly layer, and the H-F layer is moved away so as to be in the vincinity of the laser diode on the dielectric layer.
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申请人 |
ROBERT BOSCH GMBH, 70469 STUTTGART, DE |
发明人 |
HAUER, HEINER, 70734 FELLBACH, DE;KUKE, ALBRECHT, DR., 71549 AUENWALD, DE;MOESS, EBERHARD, 71540 MURRHARDT, DE |