| 摘要 |
PROBLEM TO BE SOLVED: To enable light exposure conditions to be accurately determined by a method wherein a region of the same film structure with the main part of a semiconductor device is formed when a resist pattern is formed, and one or more indexes for confirming the dimensions or forming conditions of the resist pattern are provided to the region. SOLUTION: A semiconductor device 13, alignment marks, and indexes are formed for an exposure region. An index 12 is formed on a scribe line 11 nearly at the center of the exposure region. The dimension confirming index 34 of the index 12 is formed identical in dimensions to the most important part of the semiconductor device 13 and simple in shape, and a first and a second focus position confirming indexes, 35 and 36, are formed so as to decrease gradually in size with a distance from the center. The step structure at the index 12 is set similar to that of the most important part of the semiconductor device, whereby the behavior of a resist pattern in the semiconductor device is grasped basing on that of a resist pattern on the index 12. By this setup, the forming conditions of a resist pattern can be objectively and surely determined. |
