Semiconductor devices and methods of manufacturing the same

摘要

A semiconductor device includes at least one gate electrode on a substrate structure, at least one drain region doped with impurities of a first conductivity type, a first well region doped with impurities of the first conductivity type under the at least one drain region, and at least one source region doped with impurities of the first conductivity type. The device also includes a first barrier impurity region and a second barrier impurity region. The first barrier impurity region is doped with impurities of the first conductivity type and electrically insulating upper and lower portions of the substrate structure from each other. The second barrier impurity region is doped with impurities of a second conductivity type. A portion of the second barrier impurity region has an uneven shape and overlaps the at least one drain region.

主权项

1. A semiconductor device, comprising:
at least one gate on a substrate structure; at least one drain region doped with impurities of a first conductivity type at a surface of the substrate structure spaced from a first side of the at least one gate; a first well region doped with impurities of the first conductivity type under the at least one drain region, the first well region adjacent to the at least one drain region; at least one source region doped with impurities of the first conductivity type at a surface of the substrate structure adjacent to a second side of the at least one gate; a first barrier impurity region doped with impurities of the first conductivity type in the substrate structure, the first barrier impurity region electrically insulating upper and lower portions of the substrate structure from each other; and a second barrier impurity region doped with impurities of a second conductivity type different from the first conductivity type on an upper surface of the first barrier impurity region, the second barrier impurity region having a first portion and a second portion, the first portion overlapping with the at least one drain region in a first direction which is substantially vertical relative to a top surface of the substrate structure, a lower surface of the first portion which overlaps with the at least one drain region being lower than a lower surface of the second portion.