IGBT with buried emitter electrode

摘要

There are disclosed herein various implementations of an insulated gate bipolar transistor (IGBT) with buried emitter electrodes. Such an IGBT may include a collector at a bottom surface of a semiconductor substrate, a drift region having a first conductivity type situated over the collector, and a base layer having a second conductivity type opposite the first conductivity type situated over the drift region. In addition, such an IGBT may include deep insulated trenches extending from a semiconductor surface above the base layer, into the drift region, each of the deep insulated trenches having a buried emitter electrode disposed therein. The IGBT may further include an active cell including an emitter, a gate trench with a gate electrode disposed therein, and an implant zone situated, between adjacent deep insulated trenches. The implant zone is formed below the base layer and has the first conductivity type.

主权项

1. An insulated-gate bipolar transistor (IGBT) in a semiconductor substrate, said IGBT comprising:
a collector at a bottom surface of said semiconductor substrate, a drift region having a first conductivity type situated over said collector, and a base layer having a second conductivity type opposite said first conductivity type situated over said drift region; a plurality of deep insulated trenches extending from a semiconductor surface above said base layer, into said drift region, each of said deep insulated trenches having a buried emitter electrode disposed therein; an active cell including an emitter, a gate trench with gate electrode disposed therein, and an implant zone, situated between adjacent deep insulated trenches; said implant zone being formed below said base layer and having said first conductivity type; a dummy cell neighboring said active cell, said dummy cell having neither an emitter diffusion nor a gate trench formed therein.