发明名称 MULTIELECTRON DEVICE, MANUFACTURE THEREOF AND LOGIC CIRCUIT
摘要 PROBLEM TO BE SOLVED: To realize a multielectron device having a rise (fall) time of approximately the same degree as a single-electron logic. SOLUTION: A multielectron device 10 comprises four monoelectron transistors SET1, SET2, SET3 and SET4. Further, the multielectron device 10 comprises a first overall main electrode 20, a second overall main electrode 22, a first overall control electrode 24 and a second overall control electrode 26. By connecting each of first main electrodes 12a to 12d to the first overall main electrode 12, each of second main electrodes 14a to 14d, to the second overall electrode 22, each of first control electrodes 16a to 16d, to the first overall control electrode 24, and each of second control electrodes 18a to 18d, to the second overall control electrode 26, the SET1 to SET4 are electrically connected in parallel. Thus, substantially only a single electron is stored in a center conductive layer of each of the SET1 to SET4.
申请公布号 JPH1117161(A) 申请公布日期 1999.01.22
申请号 JP19970163128 申请日期 1997.06.19
申请人 OKI ELECTRIC IND CO LTD 发明人 ASHIKAGA KINYA
分类号 H01L29/06;H01L29/66;H01L29/78;H01L49/00;(IPC1-7):H01L29/66 主分类号 H01L29/06
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