| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for enabling high density integration, by mounting bare chips on both surfaces of a substrate. SOLUTION: A recess 6 is formed in one surface 21 of a module substrate 2 and memory bare chips 1 are mounted in this recess 6. A resin is filled into the recess 6 so that a flat resin layer 7 is formed. Memory bare chips 1 are mounted in the form of COB by means of wire-bonding on the other surface 22 of the module substrate 2 by heating the flat surface of the resin layer 7. |
