| 摘要 |
PROBLEM TO BE SOLVED: To obtain a wafer which has a specific value or above in the specific resistance value of a substrate, contains a specific value or above of oxygen deposits and obviates the occurrence of a slip by the oxygen deposits when a heat treatment is applied thereon in a device production stage by subjecting a silicon wafer of the specific values or above in the specific resistance value of the substrate and oxygen concn. to a lapping treatment under specific temp. conditions. SOLUTION: This wafer has the specific resistance value of the substrate of >=10 mΩcm, contains >=5×10<4> pieces/cm<2> of the oxygen deposits and obviates the occurrence of the slip by the oxygen deposits when the heat treatment of >=1,100 deg.C is applied thereon in the production stage of the device. The silicon wafer is obtd. by subjecting the silicon wafer having the specific resistance value of the substrate of >=10 mΩcm and the oxygen concn. of >=12×10<17> atoms/cm<3> to the lapping heat treatment of an initiation temp. 500 to 600 deg.C, end temp. 800 to 900 deg.C and heating up rate <=5 deg.C/min, then to epitaxial deposition.
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