| 摘要 |
PROBLEM TO BE SOLVED: To improve seizure resistance, galling resistance and peeling resistance by forming a compound reaction layer consisting of at least one of V, Nb, Ta, N, P and the like with a prescribed metal component on a metal surface so that the layer is amorphous, and specifying the thickness. SOLUTION: When an amorphous compound reaction layer 2 with a thickness of 0.2-2.5μm is formed on the surface of a metal bed 1 by chemically reacting phosphor with a prescribed metal element mainly composed of iron, 1-20 wt.% of an aqueous solution of inorganic phosphoric acid is regulated so as to have a hydrogen ion index pH of 3.5-5.0 by use of acid and alkali to form a reaction solution, the metal bed 1 is dipped therein at a temperature of 40-90 deg.C for 3-30 minutes and chemically reacted. Then, the phosphor is adsorbed to the metal surface to form the reaction layer 2. As the element for forming the reaction layer 2, elements belonging to the groups 5 or 6 of the periodic table such as V, Nb, Ta, N, As, Sb, Bi, Cr, Mo, W, S, Se, Te, Po and the like can be used without being limited to phosphor. According to the above, satisfactory seizure resistance, galling resistance and peeling resistance can be provided.
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