| 摘要 |
A semiconductor device comprising, a semiconductor substrate, a first gate insulator film formed on the semiconductor substrate, a floating gate formed on the first gate insulator film, a second insulator film formed on the floating gate, a control gate formed on the second insulator film, and a silicon film doped with nitrogen and an impurity, and interposed between the floating gate and the second gate insulator film and/or between the second gate insulator film and the control gate.
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