| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor device with a through-hole resistance fully reduced in practical use by a method wherein in a lower wiring layer provided in the semiconductor device, fluorine atom concentration in the part, which comes into contact with a tungsten film of the wiring layer is set lower than a specified value and the tungsten film has a part of a silicon atom concentration lower than a specified value. SOLUTION: In a lower wiring layer provided in a semiconductor device, the fluorine atom concentration in the part, which comes into contact with a tungsten film having a part of a silicon atom concentration of 2.0 at.% or lower, of the wiring layer is set to 5.0×10<20> per/cm<3> . A semiconductor substrate 101 is carried in an introducing chamber 109 via a valve 113, an intermediate chamber 110 and a valve 112, and after the chamber 109 is opened to the atmosphere, the substrate 101 is discharged outside of the device to manufacture the semiconductor device. As a result of this, the fluorine atom concentration in an intermediate layer 106, which is formed on the interface between the lower wiring layer 102 and a first tungsten film 105, is about 2.0×10<20> per/cm<3> and the silicon atom concentration in a second tungsten film 107 can be set at about 1 at.
|
