发明名称 |
Method of fabricating semiconductor devices and the devices |
摘要 |
Fabricating a device including a Schottky diode by growing a dielectric film on a SiC substrate structure and forming an ohmic contact on the opposite surface of the substrate structure by depositing a layer of metal and annealing at a temperature above 900 DEG C. Implanting doping material in the substrate structure through spaced apart openings to form high resistivity areas and depositing a dielectric layer on the dielectric film to define a contact opening positioned between the spaced apart high resistivity areas. Annealing the implant at a temperature less than approximately 400 DEG C. to reduce reverse leakage current and depositing metal in the contact opening to form a Schottky contact.
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申请公布号 |
US5895260(A) |
申请公布日期 |
1999.04.20 |
申请号 |
US19960625606 |
申请日期 |
1996.03.29 |
申请人 |
MOTOROLA, INC. |
发明人 |
BHATNAGAR, MOHIT;WEITZEL, CHARLES E.;THERO, CHRISTINE |
分类号 |
H01L21/04;H01L29/872;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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