| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with the rectification characteristics of a low ON voltage, high breakdown strength and a small leakage current capable of a high speed operation. SOLUTION: Recessed parts 12 are formed on the surface of a silicon substrate 11 of an N type and low impurity concentration, an anode area 13 is formed between them and the cut-off area 14 of a P type and high impurity concentration is formed at the bottom part of the recessed part 12. An anode electrode 18 composed of a metallic material for forming a Schottky junction with the anode area 13 is provided, and the cut-off area 14 is connected to the anode electrode by a metallic film 15 formed on the inner surface of the recessed part 12. On the surface on the opposite side of the silicon substrate 11, a cathode area 16 of the N type and the high impurity concentration and a cathode electrode 17 on it are formed. |
