发明名称 LED light module and LED chip
摘要 An LED light module and an LED chip are provided. LED wafers (1) are provided on one side of a heat spreading plate (3) made of copper, aluminum or copper-aluminum composite material with a thickness of more than 0.4 mm and with an area of 5 times of the sum area of the LED wafers larger to reduce the heat-flux density. A high-voltage insulation plate (2) made of a ceramic wafer with a thickness of more than 0.15 mm is provided on the other side of the heat spreading plate (3). The heat spreading plate (3) is separated and insulated by an outer layer insulator (4) with the high-voltage insulation plate (2). This kind design can effectively reduce the internal conduction thermal resistance and raise the insulation strength, and the manufacturing cost can be reduced effectively also.
申请公布号 US9506642(B2) 申请公布日期 2016.11.29
申请号 US201113992207 申请日期 2011.03.01
申请人 Shenzhen Qin Bo Core Technology Development Co., Ltd. 发明人 Qin Biao
分类号 F21V29/70;F21V29/00;F21K99/00;F21V25/00;F21V29/89;F21Y101/02 主分类号 F21V29/70
代理机构 Novoclaims Patent Services LLC 代理人 Novoclaims Patent Services LLC
主权项 1. A LED light module including a plurality of LED wafers, an outer insulator, a high-voltage insulation plate consisting essentially of a ceramic wafer with a thickness of more than 0.15 mm, a thermal conductive core, a heat dispreading plate consisting essentially of copper, or aluminum, or copper-aluminum composite material and having Face A and Face B for said high-voltage insulation plate to be attached to, said heat dispreading plate is a plate that, the area of said heat dispreading plate is five times larger than the sum area of said LED wafers on said heat dispreading plate, and said LED wafers are set directly on Face A of said heat dispreading plate, or Face A of said heat dispreading plate is provided with a low-voltage insulation layer, the thickness of said low-voltage insulation layer is not larger than 50 μm, said LED wafers are set directly on said low-voltage insulation layer, said high-voltage insulation plate is a wafer that is attached directly on Face B of said heat dispreading plate, and is set between said heat dispreading plate and said thermal conductive core, and is attached directly on the heat absorption face of said thermal conductive core, said outer insulator is a part that, by which the whole peripheral sidewall of said heat dispreading plate is surrounded, and is in company with said high-voltage insulation plate to make the whole outer circumferential edge and Face B of said heat dispreading plate to be insulated and separated from said thermal conductive core, characterized in that: wherein the whole peripheral edge of said high-voltage insulation plate has any kind of the four insulation strength enhancing structures listed below: the heat adsorption face of said thermal conductive core is provided with a protruding portion, wherein the size of the peripheral edge of said protruding portion is smaller than the size of the peripheral edge of said high-voltage insulation plate, the size of the peripheral edge of said high-voltage insulation plate is larger than the size of the peripheral edge of said heat dispreading plate, the peripheral edge of Face B of said heat dispreading plate adopts a chamfering structure, Face B of said heat dispreading plate adopts a protruding portion, wherein the size of the peripheral edge of the protruding portion is smaller than the size of the peripheral edge of said high-voltage insulation plate.
地址 Shenzhen, Guangdong Province CN