发明名称 |
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING SEMICONDUCTOR DEVICE |
摘要 |
The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film. |
申请公布号 |
WO2016189411(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
WO2016IB52758 |
申请日期 |
2016.05.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOEZUKA, Junichi;JINTYOU, Masami;SHIMA, Yukinori |
分类号 |
H01L21/336;G02F1/1333;G02F1/1368;G09F9/30;H01L29/786;H01L51/50;H05B33/14 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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