| 摘要 |
A cylindrical polycrystal silicon rod formed of a high-purity polycrystal silicon, characterized in that a crystal having a grain diameter smaller than that of a crystal at a location where the distance from the center of deposition is 50% of the length from the center of deposition is existent in an area where the distance from the center of deposition toward the periphery is more than 50% of the length in the same lengthwise direction.
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