发明名称 EINSCHALTSTROMSPITZEN- BEGRENZER
摘要 <p>A method and apparatus for preventing current inrush upon the application of power to a load includes the steps of applying a first increasing DC voltage from a voltage source to the load through a single signal path which includes a transistor having a control electrode coupled to the voltage source and a second electrode coupled to the load. The transistor has a first operating region with an ON resistance characteristic which decreases between first and second applied control voltages. The transistor has a second operating mode in which the transistor has a relatively low on resistance RON. The transistor is thus disposed in the single signal path to both limit inrush current and to provide a low loss signal path between the voltage source and the load.</p>
申请公布号 DE69322415(T2) 申请公布日期 1999.05.20
申请号 DE1993622415T 申请日期 1993.11.22
申请人 EMC CORP., HOPKINTON, MA., US 发明人 HEYDEN, CHRISTOPHER, A., BELMONT, MA 02178, US;WATSON, DONALD, R., GROTON, MASSACHUSETTS 01450, US
分类号 H02H9/02;H02H9/00;(IPC1-7):H02H9/00 主分类号 H02H9/02
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