| 摘要 |
PROBLEM TO BE SOLVED: To prevent breakings of a resist pattern due to the reflected exposure light, and to enable fine patterning. SOLUTION: In this manufacturing method, a first SiO2 film 12 is deposited on a substrate 11, a SiO2 film 13, to which at least one of boron(B) or phosphorus(P) at concentrations of 0.1 wt.% or more is added, is deposited on the first SiO2 film 12, a photoresist 15 is applied on the SiO2 film 13, and a step of exposing the photoresist 15 by the light of wavelength of 200 nm or less is contained. |
