发明名称 |
Data buffer for programmable memory with several conditions |
摘要 |
The data buffer has a read amplifier and a data register array (10). Several upper (20-1) and lower read/write circuits (20-2) are connected between the data register array and the input/output buffers and read amplifiers, respectively. An upper (30-1) and a lower circuit (30-2) connect the data register array with the upper and/or with the lower read/write circuits. The data buffer has a read amplifier formed in several columns for the temporary storing of data, and a data register array (10) configured according to an amount of input/output buffer pins, whereby each array comprises rows according to the number of cells which are to be processed through each read amplifier. Several upper read/write circuits (20-1) are connected between the data register array and the input/output buffers. Several lower read/write circuits (20-2) are connected between the data register array and the read amplifiers. An upper (30-1) and a lower circuit (30-2) connect the data register array with the upper and/or with the lower read/write circuits. A decoder (40) with several outputs selects several word conductors of the data register array.
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申请公布号 |
DE19839089(A1) |
申请公布日期 |
1999.07.22 |
申请号 |
DE19981039089 |
申请日期 |
1998.08.27 |
申请人 |
LG SEMICON CO., LTD., CHEONGJU, KR |
发明人 |
CHANG, SEUNG-HO, CHEONGJU, KR |
分类号 |
G11C11/417;G11C7/10;G11C11/419;(IPC1-7):G11C16/06;G11C7/00 |
主分类号 |
G11C11/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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