发明名称 Data buffer for programmable memory with several conditions
摘要 The data buffer has a read amplifier and a data register array (10). Several upper (20-1) and lower read/write circuits (20-2) are connected between the data register array and the input/output buffers and read amplifiers, respectively. An upper (30-1) and a lower circuit (30-2) connect the data register array with the upper and/or with the lower read/write circuits. The data buffer has a read amplifier formed in several columns for the temporary storing of data, and a data register array (10) configured according to an amount of input/output buffer pins, whereby each array comprises rows according to the number of cells which are to be processed through each read amplifier. Several upper read/write circuits (20-1) are connected between the data register array and the input/output buffers. Several lower read/write circuits (20-2) are connected between the data register array and the read amplifiers. An upper (30-1) and a lower circuit (30-2) connect the data register array with the upper and/or with the lower read/write circuits. A decoder (40) with several outputs selects several word conductors of the data register array.
申请公布号 DE19839089(A1) 申请公布日期 1999.07.22
申请号 DE19981039089 申请日期 1998.08.27
申请人 LG SEMICON CO., LTD., CHEONGJU, KR 发明人 CHANG, SEUNG-HO, CHEONGJU, KR
分类号 G11C11/417;G11C7/10;G11C11/419;(IPC1-7):G11C16/06;G11C7/00 主分类号 G11C11/417
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