MOS semiconductor structure used as a MOSFET or IGBT structure

摘要

A MOS semiconductor structure has an internal control circuit (9), connected between a control input connection (g) and a control input (g) of a main MOS element (4), and an overvoltage protection device with parallel-connected branches containing Zener diodes (Z1p, Z2l, Z3pr). A MOS semiconductor structure has: (a) a main MOS element (4) comprising a MOS control section; (b) first and second output connections (S, D) connected to the two outputs of the main element (4); (c) a control input connection (G) connected to a control input (g) of the main element (4); (d) an internal control circuit (9) connected between the control input connection (g) and the control input (g); and (e) an overvoltage protection device (Z1p, Z2l, Z3pr) located between the control input connection (G) and the first output connection (S) and comprising a first branch, including a first Zener diode (Z1p) having a polysilicon layer applied on an insulating film on a semiconductor substrate, and a second branch, including a second Zener diode (Z2l) formed in a surface layer of the substrate and a third Zener diode (Z3pr) having a polysilicon layer applied on an insulating film on the substrate, the third diode (Z3pr) being connected with the second diode (Z2l) in series with opposite polarity and the first and second branches being connected in parallel. Independent claims are also included for the following: (i) similar MOS semiconductor structures having modified overvoltage protection devices; and (ii) a similar MOS semiconductor structure in which the internal control circuit has a MOS element comprising a MOS control section and integrated in a self-isolated zone or a junction isolated zone formed in the semiconductor substrate surface, the main MOS element channel zone being spaced by /-200 mu from the channel zone of the MOS element of the internal control circuit.