| 摘要 |
PROBLEM TO BE SOLVED: To enlarge the crystal particle diameter of a crystal semiconductor, in a method for preventing adverse effects being exerted on the other manufacturing processes at manufacturing of a thin-film semiconductor device. SOLUTION: The surface of a semiconductor to be irradiated with a layer 4 is machined, and grooves with a prescribed depth and width are formed, so that the components of a temperature grade in parallel to a base material 1 can be generated in a certain direction, at laser irradiation according to the difference of heat capacities. Crystal growth is generated in a direction parallel to the temperature grade at the time of cooling, so that crystal can be grown in parallel to the base substrate 1, and that the growth can be prevented from being stopped on a boundary face with a base oxide silicon film 2 or the surface differently from the case that crystal is grown in a vertical direction. Thus, a polycrystalline silicon 5 with high quality whose crystal particle dimension is 1μm can be formed.
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