| 发明名称 |
Thin film transistor and method for fabricating the same |
| 摘要 |
The thin film transistor of this invention is formed on a substrate and includes an active layer and a first insulating film and a second insulating film sandwiching the active layer, wherein the overall polarity of fixed charges contained in the first insulating film is the reverse of the overall polarity of fixed charges contained in the second insulating film.
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| 申请公布号 |
US5936291(A) |
申请公布日期 |
1999.08.10 |
| 申请号 |
US19980016337 |
申请日期 |
1998.01.30 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MAKITA, NAOKI;MOTOHASHI, MUNEYUKI;YAMASHITA, HIDEHIKO;IZAWA, HIDEO |
| 分类号 |
H01L21/316;H01L21/28;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/51;H01L29/786;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/316 |
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