Ion sensitive detector

摘要

An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising: a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode.

主权项

1. An ISFET detector for determining concentration of target ions in a fluid, the ISFET detector comprising:
a transistor comprising:
a semiconductor substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the semiconductor substrate;an insulating material overlying the channel region; anda gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; a conducting layer comprising an electrically conducting material; an accumulator layer formed on the conducting layer, the accumulator layer comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates target ions responsive to a concentration of the target ions in the fluid; and a conducting element comprising a switch selectively operable to electrically connect the conducting layer to, or disconnect the conducting layer from, the gate electrode.