| 摘要 |
PROBLEM TO BE SOLVED: To obtain a new compound useful as a monomer for a copolymer resin, for photoresist, which is used for ultra-short wavelength light sources such as ArF, has high transparency at a specific wavelength, high etching resistance, a high protection coefficient in the copolymer resin, high adhesiveness with suppressing the top-loss phenomenon, and excellent resolution. SOLUTION: This compound, shown by the formula (i.e., 2,3-di-tert-butyl-5- norbornene-2,3-dicarboxylate), is obtained by reacting cyclopentadiene with 1,4-di-tert-butyl furnate in a usual organic solvent (e.g. tetrahydrofuran), for example, at 20-80 deg.C for 10 h or so, followed by removing the organic solvent, for example, by a rotary evaporator. A copolymer resin for photoresist having high transparency at 193 nm and an excellent resolution of 0.13μm in a practical patterning experiment, can be obtained by copolymerizing the compound with maleic acid anhydride or the like. |
