发明名称 |
Semiconductor device having a thin gate oxide and method of manufacture thereof |
摘要 |
A process for fabricating a device having a thin gate oxide layer on which a gate electrode is formed is disclosed. The thin gate oxide layer is formed using an ion implantation process in order to reliably control the thickness of the gate oxide layer. A nitrogen-containing species is used in the ion implantation in order to form a nitrogen rich oxide layer and to increase the reliability and performance of a resultant device.
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申请公布号 |
US5970350(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19960760723 |
申请日期 |
1996.12.05 |
申请人 |
ADVANCED MICRO DEVICES |
发明人 |
GARDNER, MARK I.;SPIKES, THOMAS, JR. E.;PAIZ, ROBERT |
分类号 |
H01L21/265;H01L21/28;H01L29/51;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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