METHOD OF FORMING PHOTORESIST PATTERN SLOPED AT CONSTANT ANGLE

摘要

PURPOSE: The method is to form a photoresist pattern to improve the quality of a device by simplifying the control of ion implantation process and not limiting to the post unit process development. CONSTITUTION: The method comprises the steps of: forming photoresist patterns(2A) on a substrate; changing into photoresist patterns(2B) having sloped side by flowing above photoresist patterns through thermal process; depositing a SOG film(5) on top of photoresist patterns; dishing the SOG film and photoresist patterns; silylating one of photoresist patterns selectively; and forming a photoresist pattern(2D) comprising the silylated photoresist pattern and the SOG film by removing the not-silylated photoresist pattern selectively through O2 plasma treatment.