SELF-ALIGN CONTACT HOLE FORMING METHOD OF SEMICONDUCTOR APPARATUS

摘要

PURPOSE: A self-align contact hole forming method of a semiconductor apparatus is provided to prevent the gate electrode from exposing by the over-etching of the gate etching preventing film. CONSTITUTION: The self-align contact hole forming method of a semiconductor apparatus comprises the steps of: laminating a first conduction layer for the gate electrode, a second conduction layer for the gate electrode and a mask insulating film(24) on the upper area of a semiconductor substrate(20); forming a gate electrode pattern consisting of an undercut on the lower area of the mask insulating film(24); forming a gate etching preventing film on the upper area of the whole structure; forming an interlayer insulating film(27) on the upper area of the etching preventing film; forming a contact hole by selectively etching the interlayer insulating film and the etching preventing film; and forming a self-align contact hole of a semiconductor apparatus.