METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: The method can prevent that a polysilicon film remains on the bottom of a sacrificial film(27) formed to fill an open aperture and acts as a pollution source, in the process of forming a bottom electrode of a capacitor by forming the open aperture. CONSTITUTION: The method can solve the problem resulting from that a burying oxide film remains in a peripheral circuit region by omitting the process of forming the burying oxide film to bury an open aperture, by comprising the steps of: forming the open aperture to form a bottom electrode(28A) pattern of a capacitor in a cell region; forming a polysilicon film(28) for bottom electrode on the whole structure; removing the polysilicon film for bottom electrode formed on the peripheral circuit region by selective etching process; and forming the bottom electrode pattern by polishing the polysilicon film for bottom electrode on the cell region.