发明名称 METHOD OF FABRICATING FERROELECTRIC CAPACITOR
摘要 PURPOSE: The method is to fabricate a ferroelectric capacitor simply regardless of the existence of step difference. CONSTITUTION: The method comprises the steps of: forming a TiO2 etch stop layer(12), a bottom electrode(13), a ferroelectric layer(14), a top electrode(15) and a Ti mask layer(16) on a substrate(11) in sequence; patterning the Ti mask layer; revealing the TiO2 etch stop layer by etching the top electrode, the ferroelectric layer and the bottom electrode; and removing the revealed TiO2 etch stop layer and the Ti mask layer.
申请公布号 KR20000003226(A) 申请公布日期 2000.01.15
申请号 KR19980024418 申请日期 1998.06.26
申请人 LG ELECTRONICS INC. 发明人 LEE, HEUN MIN;KIM, DONG CHEUN
分类号 H01L27/105;(IPC1-7):H01L27/105 主分类号 H01L27/105
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