发明名称 |
METHOD OF FABRICATING FERROELECTRIC CAPACITOR |
摘要 |
PURPOSE: The method is to fabricate a ferroelectric capacitor simply regardless of the existence of step difference. CONSTITUTION: The method comprises the steps of: forming a TiO2 etch stop layer(12), a bottom electrode(13), a ferroelectric layer(14), a top electrode(15) and a Ti mask layer(16) on a substrate(11) in sequence; patterning the Ti mask layer; revealing the TiO2 etch stop layer by etching the top electrode, the ferroelectric layer and the bottom electrode; and removing the revealed TiO2 etch stop layer and the Ti mask layer.
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申请公布号 |
KR20000003226(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980024418 |
申请日期 |
1998.06.26 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
LEE, HEUN MIN;KIM, DONG CHEUN |
分类号 |
H01L27/105;(IPC1-7):H01L27/105 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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