SEMICONDUCTOR DEVICE PRODUCTION METHOD

摘要

PURPOSE: A semiconductor element production method is provided to increase the integration rate by forming gate transistors on each different plane. CONSTITUTION: The manufacturing process of the semiconductor element comprises; evaporating an oxide film(2) and a nitride film(3) on the substrate(1) one after another, etching the nitride film(3), oxide film and the substrate(1) and forming a trench structure and evaporating an oxide film(4) in the trench structure(illu.2a); evaporating a thin nitride film(5) and a thick oxide film(6) on overall the oxide films(2)(4), and forming an oxide film side wall(6) on the side of the oxide film(4).