SILICON CARBIDE SINGLE CRYSTAL AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To produce a high grade single crystal at high productivity, hardly containing lattice defect and micropipe defect. SOLUTION: This single crystal is produced by heat-treatingα-SiC single crystal substrate 1 andβ-SiC polycrystalline plate 2 comprising Si atoms and C atoms in a state facing each other so as to form infinitesimal airspace 3 between confronted faces 1a and 2a in an atmosphere of inert gas and SiC saturated vapor pressure so as to give temperature gradient in such a way as to maintain theα-SiC single crystal substrate 1 at lower temperature than that of the plate 2, by sublimating and diffusing Si atoms and C ones of the plate 2 in the airspace 3 to recrystallize them on the substrate 1 having a lower temperature and by making a single crystal oriented in the same direction as the crystal axis of the substrate 1 grow in a unified state.