发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent degradation in film adhesion, film fatigue characteristics, and polarity holding characteristics caused by stress, for improved reliability, by using a compound comprising platinum element as an electrode. SOLUTION: The surface of a silicon substrate 101 is oxidized to form an insulating layer 102, over which titanium is used as an adhesion-strengthening film 103 against an electrode, then platinum as an electrode material, and the target of (Pb(ZrxTi1-x)O3) as an dielectrics material, to form one electrode 104 of a capacity element (a lower part electrode) and a dielectrics film 106. Here, by changing an RF power applied to a platinum target and PZT target, a composition transition region 105 wherein the ratio between platinum and the PZT constituting the dielectrics film 106 continuously changes is formed, and a specified pattern is formed as a remaining one electrode 107 of the capacity element (an upper part electrode). Thus, the stress at the interface between a dielectronics and an electrode is relaxed to prevent degradation in film adhesion, film fatigue characteristics, and polarity holding characteristics caused by the stress, resulting in improved reliability.
申请公布号 JP2000077612(A) 申请公布日期 2000.03.14
申请号 JP19990187571 申请日期 1999.07.01
申请人 SEIKO EPSON CORP 发明人 KATO KOJI
分类号 H01G4/12;H01G4/10;H01L21/822;H01L27/04;H01L41/18;(IPC1-7):H01L27/04 主分类号 H01G4/12
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