Silicon carbide component, especially a Schottky diode, is produced by forming an ohmic contact before high temperature growth of an epitaxial layer

摘要

Silicon carbide component production comprises ohmic contact formation before high temperature epitaxial layer growth. Production of a component having a silicon carbide substrate (1) with ohmic and Schottky contacts comprises applying an ohmic contact metallization on the substrate back face prior to growing an epitaxial layer on the substrate front face at above 1300 deg C and applying Schottky contact metallization on the epitaxial layer. Preferred Features: The ohmic contact metal is Nb, Ta, Mo or W.