| 主权项 |
1. A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performing one or more process cycles, each process cycle comprising:
(i) feeding a silicon-containing precursor in a pulse to a reaction space where the substrate is placed, said silicon-containing precursor being constituted by one or more hydrocarbon-containing compounds selected from the group consisting of: SiH2R2, Si2H2R4, SiR2X2, Si2R6, SiH3R, Si2H4R2, SiH2RX, C3H6SiH2, C2H4SiH2, C2H4Si2H2, SiNHSiR4H2, SiNHSiR6, and SiHX2R, wherein each X is independently chain or cyclic CxHy, and each R is independently chain or cyclic CxHy, cyclic NxCyHz, N(CxHy)2, N(CxHy)H, O(CxHy), or OH, wherein x, y, and z are integers; (ii) supplying a hydrogen-containing reactant gas to the reaction space at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power to the reaction space in the presence of the hydrogen-containing reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle. |
