BIAS VOLTAGE GENERATION CIRCUIT FOR CONFIRMING RECORD OF FLASH MEMORY DEVICE

摘要

PURPOSE: A bias voltage generation circuit for confirming record of a flash memory device is provided to prevent a malfunction of a device by distinguishing read bias voltage provided to a memory cell array portion and a cell block for record confirmation. CONSTITUTION: A bias voltage generation circuit for confirming record of a flash memory device comprises a memory cell array portion(110), a cell block for record confirmation(120), and a read bias voltage generation portion(100). The memory cell array portion comprises a program of data and a multitude of erasable memory cell. The cell block for record confirmation confirms a program of data recorded in a selected cell or a state of erasion in order to confirm the record of the memory cells. The read bias voltage generation portion comprises a bias voltage generation portion(102), a first read voltage supply portion(104), and a second voltage supply portion(106). The bias voltage generation portion generates a bias voltage. The first read voltage supply portion supplies a corresponding a read voltage. The second read voltage supply portion supplies the read voltage less than the first read voltage supply portion.