Vertically integrated thin film photodiode, for photodetector used e.g. in optical data storage and transmission, is produced by thinning and reflective coating of a photodiode substrate bonded to a temporary substrate

摘要

Thin film photodiode production comprises thinning and reflective coating of a photodiode substrate (1) bonded to a temporary substrate prior to bonding to a third substrate. A thin film photodiode is produced by bonding the photodiode side of a first substrate (1) to a second substrate, thinning the first substrate to a few microns thickness, applying a reflective layer or layer sequence onto the first substrate, bonding the reflective side of the first substrate onto a third substrate and removing the second substrate.