| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method thereof, which enables reduction in the source drain resistance of a pMOS transistor in a CMOS(complementary metal oxide film semiconductor) device and in the uniformization of the impurity profile of nMOS and pMOS transistors. SOLUTION: In this semiconductor device having a CMOS device, a single- crystal Si film 26 is formed on a source/drain diffused layer 24 of an nMOS transistor, a laminated film composed of single-crystal Si films 30, 26 is formed on a source/drain diffused layer 28 of a pMOS transistor, a laminated film composed of an Si oxide film 14, Si nitride film 16, Si oxide film 18, Si oxide film 20 and Si nitride film 22 is formed on the side face of the gate electrode of the nMOS transistor, and a laminate film composed of an Si oxide film 14, Si oxide film 20 and Si nitride film 22 is formed on the side face of the gate electrode of the pMOS transistor.
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