| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high melting metal film, especially, a low-resistance gate electrode using a tungsten film by composing a gate electrode being composed on a gate insulating film on a silicon substrate of a titanium nitride film, a tungsten silicon film, and a tungsten film in this order from the side of the gate electrode. SOLUTION: A gate electrode being composed on a gate insulating film 3 on a silicon substrate 2 is composed of a titanium nitride film 5, a tungsten silicon film 6, and a tungsten film 7 in this order from the side of the gate electrode. In this case, although later heat treatment allows the tungsten film 7 to react with the amorphous silicon film 6 to form a tungsten silicide film 61, the tungsten silicide film cannot become the mutual diffusion path of impurities since the tungsten silicide film exists on the titanium nitride film 5. Also, the amorphous silicon film 6 is thinner than the tungsten film 7, thus preventing the increase in the sheet resistance of the gate electrode even when the tungsten silicide film 61 is formed. |
